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1

[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - 300 GHz Wireless Communication Systems Exploiting the Benefits of Combining Photonic and Electronic Transceiver Components

Kallfass, I., Dan, I., Szriftgiser, P., Chinni, V., Zaknoune, M., Ducournau, G.

Année:

2019

Langue:

english

Fichier:

PDF, 191 KB

english, 2019

2

Staff extremity doses in interventional radiology. Results of the ORAMED measurement campaign

D. Nikodemová, M. Brodecki, E. Carinou, J. Domienik, L. Donadille, C. Koukorava, S. Krim, N. Ruiz-López, M. Sans-Merce, L. Struelens, F. Vanhavere, R. Zaknoune

Journal:

Radiation Measurements

Année:

2011

Langue:

english

Fichier:

PDF, 721 KB

english, 2011

3

Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management

Grandchamp, B., Nodjiadjim, V., Zaknoune, M., Kone, G.A., Hainaut, C., Godin, J., Riet, M., Zimmer, T., Maneux, C.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 559 KB

english, 2011

4

Power measurement setup for large signal microwave characterization at 94 GHz

Medjdoub, F., Vandenbrouck, S., Gaquiere, C., Delos, E., Zaknoune, M., Theron, D.

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2006

Langue:

english

Fichier:

PDF, 116 KB

english, 2006

5

480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design

Zaknoune, M., Mairiaux, E., Roelens, Y., Waldhoff, N., Rouchy, U., Frijlink, P., Rocchi, M., Maher, H.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 220 KB

english, 2012

6

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

Thiam, Arame, Roelens, Yannick, Coinon, Christophe, Avramovic, Vanessa, Grandchamp, Brice, Ducatteau, Damien, Wallart, Xavier, Maneux, Cristell, Zaknoune, Mohammed

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 1000 KB

english, 2014

7

[IEEE 14th Indium Phosphide and Related Materials Conference (IPRM) - Stockholm, Sweden (12-16 May 2002)] Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) - Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor

Lefebvre, E., Zaknoune, M., Mollot, F.

Année:

2002

Langue:

english

Fichier:

PDF, 375 KB

english, 2002

8

[IEEE 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - Copenhagen, Denmark (2016.9.25-2016.9.30)] 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - THz transmission using QAM-16 and 32 Gbit/s on 25m

Latzel, Philipp, Pavanello, Fabio, Bretin, Sara, Szriftgiser, Pascal, Kassi, Redha, Engenhardt, Klaus, Lecomte, Erwan, Peytavit, Emilien, Lampin, Jean-Francois, Zaknoune, Mohammed, Ducournau, Guillaum

Année:

2016

Langue:

english

Fichier:

PDF, 452 KB

english, 2016

9

Versatile bondpad report process for non-planar compound semiconductor devices

Sophie Garidel, Jean-Pierre Vilcot, Mohammed Zaknoune, Pascal Tilmant

Journal:

Microelectronic Engineering

Année:

2004

Langue:

english

Fichier:

PDF, 317 KB

english, 2004

10

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 207 KB

english, 2005

11

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

D. Vignaud, M. Zaknoune, F. Mollot

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 146 KB

english, 2006

12

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

D.A. Yarekha, S. Godey, X. Wallart, H. Colder, M. Zaknoune, F. Mollot

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 149 KB

english, 2007

13

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

F. Medjdoub, F. Dessenne, J.L. Thobel, M. Zaknoune, D. Theron

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 397 KB

english, 2004

14

0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

M Zaknoune, Y Cordier, S Bollaert, D Ferre, D Théron, Y Crosnier

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 303 KB

english, 2000

15

The indium content in metamorphic InxAl1−xAs/InxGa1−xAs HEMTs on GaAs substrate: a new structure parameter

S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, V. Hoel, S. Lepilliet, D. Théron, A. Cappy

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 275 KB

english, 2000

16

Hemt’s capability for millimeter wave applications

S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, A. Cappy

Journal:

annals of telecommunications - annales des télécommunications

Année:

2001

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2001

17

Estimation of moisture transport coefficients in porous materials using experimental drying kinetics

A. Zaknoune, P. Glouannec, P. Salagnac

Journal:

Heat and Mass Transfer

Année:

2012

Langue:

english

Fichier:

PDF, 961 KB

english, 2012

18

Liesegang banding and multiple precipitate formation in cobalt phosphate systems

Tony Karam, Houssam El-Rassy, Farah Zaknoun, Zeinab Moussa, Rabih Sultan

Journal:

Chemical Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 707 KB

english, 2012

19

Staff eye lens and extremity exposure in interventional cardiology: Results of the ORAMED project

L. Donadille, E. Carinou, M. Brodecki, J. Domienik, J. Jankowski, C. Koukorava, S. Krim, D. Nikodemova, N. Ruiz-Lopez, M. Sans-Merce, L. Struelens, F. Vanhavere, R. Zaknoune

Journal:

Radiation Measurements

Année:

2011

Langue:

english

Fichier:

PDF, 375 KB

english, 2011

20

InP HEMT downscaling for power applications at W band

Medjdoub, F., Zaknoune, M., Wallart, X., Gaquiere, C., Dessenne, F., Thobel, J.-L., Theron, D.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2005

21

High-efficiency uni-travelling-carrier photomixer at 1.55 [micro sign]m and spectroscopy application up to 1.4 THz

Beck, A., Ducournau, G., Zaknoune, M., Peytavit, E., Akalin, T., Lampin, J.F., Mollot, F., Hindle, F., Yang, C., Mouret, G.

Journal:

Electronics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 167 KB

english, 2008

22

InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

Zaknoune, M., Bonte, B., Gaquiere, C., Cordier, Y., Druelle, Y., Theron, D., Crosnier, Y.

Journal:

IEEE Electron Device Letters

Année:

1998

Langue:

english

Fichier:

PDF, 69 KB

english, 1998

23

Optically power supplied Gbit/s wireless hotspot using 1.55 [micro sign]m THz photomixer and heterodyne detection at 200 GHz

Ducournau, G., Szriftgiser, P., Bacquet, D., Beck, A., Akalin, T., Peytavit, E., Zaknoune, M., Lampin, J.F.

Journal:

Electronics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 283 KB

english, 2010

24

Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate

Cordier, Y., Zaknoune, M., Trassaert, S., Chauveau, J. M.

Journal:

Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 604 KB

english, 2001

25

Identification of the Liquid and Vapour Transport Parameters of an Ecological Building Material in Its Early Stages

A. Zaknoune, P. Glouannec, P. Salagnac

Journal:

Transport in Porous Media

Année:

2013

Langue:

english

Fichier:

PDF, 2.97 MB

english, 2013

26

[IEEE Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan (11-15 May 1998)] Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) - AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: from material to device

Cordier, Y., Bollaert, S., Zaknoune, M., diPersio, J., Ferre, D.

Année:

1998

Langue:

english

Fichier:

PDF, 437 KB

english, 1998

27

Quantified Explosives Transfer on Surfaces for the Evaluation of Trace Detection Equipment

Tam, Maggie, Pilon, Pierre, Zaknoun, Hafid

Journal:

Journal of Forensic Sciences

Année:

2013

Langue:

english

Fichier:

PDF, 166 KB

english, 2013

28

Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate

Bollaert, S., Cordier, Y., Hoel, V., Zaknoune, M., Happy, H., Lepilliet, S., Cappy, A.

Journal:

IEEE Electron Device Letters

Année:

1999

Langue:

english

Fichier:

PDF, 94 KB

english, 1999

29

Narrow Linewidth Tunable Terahertz Radiation By Photomixing Without Servo-Locking

Rolland, Antoine, Ducournau, Guillaume, Danion, Gwennael, Loas, Goulc'hen, Brunel, Marc, Beck, Alexandre, Pavanello, Fabio, Peytavit, Emilien, Akalin, Tashin, Zaknoune, Mohammed, Lampin, Jean-Francois

Journal:

IEEE Transactions on Terahertz Science and Technology

Année:

2014

Langue:

english

Fichier:

PDF, 1.63 MB

english, 2014

30

[IEEE 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM) - Santa Barbara, CA, USA (2012.08.27-2012.08.30)] 2012 International Conference on Indium Phosphide and Related Materials - Lattice matched and Pseudomorphic InGaAs MOSHEMT with fT of 200GHz

Mo, J.J., Wichmann, N., Roelens, Y., Zaknoune, M., Desplanque, L., Wallart, X., Bollaert, S.

Année:

2012

Langue:

english

Fichier:

PDF, 432 KB

english, 2012

31

Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup

L. Prissette, G. Ducournau, T. Akalin, E. Peytavit, A. Beck, M. Zaknoune, D. Ducatteau, J. F. Lampin

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2011

Langue:

english

Fichier:

PDF, 222 KB

english, 2011

32

High-definition television transmission at 600 GHz combining THz photonics hotspot and high-sensitivity heterodyne receiver

Nouvel, P., Lampin, J.F., Blin, S., Tohme, L., Szriftgiser, P., Beck, A., Zaknoune, M., Pavanello, F., Peytavit, E., Ducournau, G.

Journal:

Electronics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 455 KB

english, 2014

33

Ultrawide-Bandwidth Single-Channel 0.4-THz Wireless Link Combining Broadband Quasi-Optic Photomixer and Coherent Detection

Ducournau, Guillaume, Szriftgiser, Pascal, Beck, Alexandre, Bacquet, Denis, Pavanello, Fabio, Peytavit, Emilien, Zaknoune, Mohammed, Akalin, Tahsin, Lampin, Jean-Francois

Journal:

IEEE Transactions on Terahertz Science and Technology

Année:

2014

Langue:

english

Fichier:

PDF, 1.50 MB

english, 2014

34

InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

Cordier, Yvon, Bollaert, Sylvain, Zaknoune, Mohammed, Dipersio, Jean, Ferre, Denise

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 542 KB

english, 1999

35

[IEEE GaAs IC Symposium. 21st Annual. Technical Digest 1999 - Monterey, CA, USA (17-20 Oct. 1999)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) - Status of metamorphic In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As HEMTs

Cappy, A., Cordier, Y., Bollaert, S., Zaknoune, M.

Année:

1999

Langue:

english

Fichier:

PDF, 342 KB

english, 1999

36

Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors

H. Nguyen Van, J. C. Moreno, A. N. Baranov, R. Teissier, M. Zaknoune

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 292 KB

english, 2012

37

High-power V-band Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic HEMT grown by gas source molecular beam epitaxy

Zaknoune, M., Schuler, O., Piotrowicz, S., Mollot, F., Theron, D., Crosnier, Y.

Journal:

IEEE Microwave and Guided Wave Letters

Année:

1999

Langue:

english

Fichier:

PDF, 228 KB

english, 1999

38

[IEEE 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2012) - Wollongong, NSW, Australia (2012.09.23-2012.09.28)] 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves - Narrow linewidth tunable THz signal generation using a unitravelling carrier photodiode and a dual-mode laser

Ducournau, G., Rolland, A., Loas, G., Beck, A., Pavanello, F., Peytavit, E., Akalin, T., Zaknoune, M., Lampin, J.F., Brunel, M., Bondu, F., Vallet, M., Alouini, M.

Année:

2012

Langue:

english

Fichier:

PDF, 271 KB

english, 2012

39

60-GHz high power performance In/sub 0.35/Al/sub 0.65/As-In/sub 0-35/Ga/sub 0.65/As metamorphic HEMTs on GaAs

Zaknoune, M., Ardouin, M., Cordier, Y., Bollaert, S., Bonte, B., Theron, D.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 237 KB

english, 2003

40

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication

Mairiaux, E., Desplanque, L., Wallart, X., Dambrine, G., Zaknoune, M.

Année:

2008

Langue:

english

Fichier:

PDF, 920 KB

english, 2008

41

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - 0.06 μm gate length metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs with high f/sub T/ and f/sub MAX/

Bollaert, S., Cordier, Y., Zaknoune, M., Happy, H., Lepilliet, S., Cappy, A.

Année:

2001

Langue:

english

Fichier:

PDF, 413 KB

english, 2001

42

[IEEE 56th Annual Device Research Conference Digest - Charlottesville, VA, USA (22-24 June 1998)] 56th Annual Device Research Conference Digest (Cat. No.98TH8373) - High performance metamorphic In/sub 0.32/Al/sub 0.68/As/In/sub 0.33/Ga/sub 0.67/As HEMTs on GaAs substrate with an inverse step InAlAs metamorphic buffer

Zaknoune, M., Cordier, Y., Bollaert, S., Druelle, Y., Theron, D., Crosnier, Y.

Année:

1998

Fichier:

PDF, 534 KB

1998

43

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Power potentiality at 94 GHz of InP HEMTs with large band gap channels

Medjdoub, F., Zaknoune, M., Wallart, X., Theron, D.

Année:

2005

Langue:

english

Fichier:

PDF, 524 KB

english, 2005

44

Unambiguous Characterization of Analytical Markers in Complex, Seized Opiate Samples Using an Enhanced Ion Mobility Trace Detector-Mass Spectrometer

Liuni, Peter, Romanov, Vladimir, Binette, Marie-Josée, Zaknoun, Hafid, Tam, Maggie, Pilon, Pierre, Hendrikse, Jan, Wilson, Derek J.

Journal:

Analytical Chemistry

Année:

2014

Langue:

english

Fichier:

PDF, 4.04 MB

english, 2014

45

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Ft of 100GHz for 100nm multi-gate In0.53Ga0.45As MOSFET

Jiongjiong, M O, Wichmann, Nicolas, Roelens, Yannick, Zaknoune, Mohamed, Desplanque, Ludovic, Wallart, Xavier, Bollaert, Sylvain

Année:

2011

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2011

46

Microwave Performance of $\hbox{InAlAsSb/In}_{0.35} \hbox{Ga}_{0.65}\hbox{Sb/InAlAsSb}$ Double Heterojunction Bipolar Transistors

Mairiaux, E., Desplanque, L., Wallart, X., Zaknoune, M.

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 271 KB

english, 2010

47

0.2-$\mu{\rm m}$ InP/GaAsSb DHBT Power Performance With 10 ${\rm mW}/\mu{\rm m}^{2}$ and 25% PAE at 94 GHz

Zaknoune, Mohammed, Okada, Etienne, Mairiaux, Estelle, Roelens, Yannick, Ducatteau, Damien, Frijlink, Peter, Rocchi, Marc, Maher, Hassan

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 543 KB

english, 2014

48

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - Charge control and electron transport properties in In/sub y/Al/sub 1-y/As/In/sub x/Ga/sub 1-x/As metamorphic HEMTs: effect of indium content

Cordier, Y., Zaknoune, M., Bollaert, S., Cappy, A.

Année:

2000

Langue:

english

Fichier:

PDF, 395 KB

english, 2000

49

[IEEE 2011 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2011) - Houston, TX, USA (2011.10.2-2011.10.7)] 2011 International Conference on Infrared, Millimeter, and Terahertz Waves - Sub-micron quantum cascade transistor

Van, H. Nguyen, Moreno, J. C., Baranov, A. N., Zaknoune, M., Teissier, R.

Année:

2011

Langue:

english

Fichier:

PDF, 146 KB

english, 2011

50

[IEEE 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008) - Pasadena, CA (2008.09.15-2008.09.19)] 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves - Terahertz photomixing in InP/InGaAs UTC-PD integrated with TEM horn antennas

Beck, A., Zaknoune, M., Peytavit, E., Akalin, T., Ducournau, G., Lampin, J.-F., Mollot, F., Hindle, F., Yang, C., Mouret, G.

Année:

2008

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2008